Tuning the polarity of charge carriers using electron deficient thiophenes.

Tuning the polarity of charge carriers using electron deficient thiophenes† †Electronic supplementary information (ESI) available: General experimental, synthetic details and characterization. See DOI: 10.1039/c6sc05283e Click here for additional data file.

Bipolar charging and discharging of a perfectly conducting sphere in a lossy medium stressed by a uniform electric field

Generalized analysis is presented extending recent work of the charging of a perfectly conducting sphere from a single charge carrier to two charge carriers of opposite polarity, with different values of volume charge density and mobility and including an ohmic lossy dielectric region surrounding a perfectly conducting sphere. Specific special cases treated are: (1) unipolar positive or negativ...

Bipolar charging and discharging of a perfectly conducting sphere in a lossy medium stressed by a uniform electric field Citation

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Generalized analysis is presented extending recent work of the charging of a perfectly conducting sphere from a sin...

Regiocontroled Pd-catalysed C5-arylation of 3-substituted thiophene derivatives using a bromo-substituent as blocking group

The use of a bromo-substituent as blocking group at the C2-position of 3-substituted thiophenes allows the regioselective introduction of aryl substituents at C5-position via Pd-catalysed direct arylation. With 1 mol % of a phosphine-free Pd catalyst, KOAc as the base and DMA as the solvent and various electron-deficient aryl bromides as aryl sources, C5-(hetero)arylated thiophenes were synthes...

Time-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)

Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...